Method and apparatus for testing a wafer using a laser beam...

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

Reexamination Certificate

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C324S754120

Reexamination Certificate

active

07026836

ABSTRACT:
Provided is a semiconductor device wafer testing method is provided, including: irradiating a wafer on which a semiconductor device chip is integrated with a quantum beam, and shifting an irradiation position thereof while detecting one of a thermoelectric current and a thermoelectric voltage which are generated in the wafer; and determining whether or not the detected one of the thermoelectric current and the thermoelectric voltage exceeds a threshold and storing as defect position address information an irradiation position of the quantum beam on the wafer when the detected one of the thermoelectric current and the thermoelectric voltage exceeds the threshold.

REFERENCES:
patent: 5365034 (1994-11-01), Kawamura et al.
patent: 5804980 (1998-09-01), Nikawa
patent: 6078183 (2000-06-01), Cole, Jr.
patent: 6407558 (2002-06-01), Shabde et al.
patent: 6545500 (2003-04-01), Field

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