Method and apparatus for temperature measurement, and...

Thermal measuring and testing – Temperature measurement – By electrical or magnetic heat sensor

Reexamination Certificate

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C327S513000

Reexamination Certificate

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06851849

ABSTRACT:
At least one forward-biased semiconductor diode having a potential barrier is used as a temperature sensor whose sensitivity can be finely adjusted. An operational amplifier circuit (A1) is used to apply a bias voltage of DC or rectangular waveform to a semiconductor diode (D) having a potential barrier used as a temperature sensor. In view of the fact that the temperature sensitivity of the semiconductor diode (D) depends on the height of its potential barrier, the forward bias voltage applied from a bias circuit (2) directly to the semiconductor diode (D) is finely adjusted to obtain desired temperature sensitivity. The output voltage of the sensor is associated with a current, having an exponential temperature dependence, which flows in the semiconductor diode (D) with the forward bias being fixed.

REFERENCES:
patent: 3719797 (1973-03-01), Andrews et al.
patent: 95400143.4 (1995-01-01), None
patent: 05-040064 (1993-02-01), None
patent: 09-036356 (1997-02-01), None
patent: 11-287713 (1999-10-01), None
Kimurua, Mitsuteru, et al., “Schottky Barrier Thermistor,” Technical Digest of the 11th Sensor Symposium, 1992, pp. 107-110.

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