Method and apparatus for target support in electron projection s

Details Method and apparatus for target support in electron projection s Method and apparatus for target support in electron projection s

1975-03-13

1976-09-28

Smith, Alfred E.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 3730

Patent

active

039834018

ABSTRACT:
Apparatus and a corresponding method for supporting a wafer of target material for exposure to a beam or pattern of electrons with little or no distortion of the electric field used to accelerate the electrons from a cathode to the target. In one embodiment, the target wafer is supported on a flat pedestal some distance above a surrounding anode structure, and is insulated from the pedestal by a thin dielectric sheet. A bias voltage applied between the wafer and the pedestal and anode structure is selected to minimize distortion of the electric field, and also serves to secure and flatten the wafer against the pedestal by electrostatic attraction. Alternatively, the wafer may be held in position by a retaining lip projecting over the edges of the wafer, the lip having a conductive surface layer insulated by a dielectric layer from the remainder of the lip and from the wafer. Distortion of the electron-accelerating field is minimized by applying an appropriate bias voltage between the wafer and the conductive layer on the lip.

REFERENCES:
patent: 3551734 (1970-12-01), O'Keeffe et al.
patent: 3619608 (1971-11-01), Westerberg
patent: 3707765 (1973-01-01), Coleman
patent: 3745358 (1973-07-01), Firtz et al.
patent: 3809582 (1974-05-01), Tarneja et al.
"Electrostatic Wafer Chuck for Electron Beam Microfabrication" George Wardly, Rev. Sci. Instrum., vol. 44, No. 10, Oct. 1973 pp. 1506-1509.

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