Method and apparatus for supplying background gas in a sputterin

Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating

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204298, C23C 1500

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039765555

ABSTRACT:
In a sputtering chamber where there is at least one target of some material comprising at least two elements which are to be sputtered as a compound onto a substrate within the chamber, a target having a plurality of edges is framed by a metallic shield to confine the sputtering to a forward direction and the background gas needed for maintaining stoichiometry of the sputtered material is injected directly inside of the shield so that immediately upon entry into the chamber a substantial portion thereof flows over the target. A perforated manifold running the length of an edge of the target releases the background gas to the target along its length.

REFERENCES:
patent: 3418229 (1968-12-01), Lakshmanan et al.
patent: 3738928 (1973-06-01), Glaser
patent: 3748253 (1973-07-01), Provenzano et al.
patent: 3827966 (1974-08-01), Needham
patent: 3855612 (1974-12-01), Rosvold
patent: 3856654 (1974-12-01), George
patent: 3890217 (1975-06-01), Burrows et al.
C. H. George, "Cylindrical Diode Continuous Vacuum Sputtering Equipment for Laboratory & High Volume Production," J. Vac. Sci. Tech., vol. 10, No. 2, Mar./Apr. 1973, pp. 393-397.

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