Method and apparatus for storing data in a write-once...

Details Method and apparatus for storing data in a write-once... Method and apparatus for storing data in a write-once...

2008-10-30

2011-11-08

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Read only systems

Semiconductive

C365S094000, C365S103000, C365S207000, C365S210100

Reexamination Certificate

active

08054668

ABSTRACT:
In an illustrative embodiment, a memory cell comprises a first and a second MOSFET, wherein the first MOSFET undergoes a process to modify the threshold voltage such that a modified threshold voltage represents a first stored logic value. By determining which one of the first and the second MOSFETs has an altered threshold voltage, the stored logic value is determinable. The threshold voltage of the first MOSFET is altered by supplying current through a MOSFET gate, causing a gate heating effect that results in a threshold voltage shift.

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