Method and apparatus for stopping mechanical and chemical-mechan

Etching a substrate: processes – Nongaseous phase etching of substrate – Using film of etchant between a stationary surface and a...

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156345, C03C 1502, C23F 100

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active

058558047

ABSTRACT:
A method and apparatus for forming a planar surface on a substrate at a desired endpoint. In one embodiment of the invention, material is removed from a substrate with an abrasive medium on a planarizing surface. As material is removed from the substrate, the abrasive medium is selectively inhibited from contacting a first exposed area at the desired endpoint on the substrate while it still contacts a second area on the substrate that is not yet at the endpoint. In this embodiment of the invention, therefore, polishing substantially stops at the first area on the substrate but continues at the second area on the substrate.

REFERENCES:
patent: 5064683 (1991-11-01), Poon et al.
patent: 5314843 (1994-05-01), Yu et al.
patent: 5609719 (1997-03-01), Hempel

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