Fishing – trapping – and vermin destroying
Patent
1995-02-15
1996-05-21
Fourson, George
Fishing, trapping, and vermin destroying
437 69, H01L 2184
Patent
active
055189393
ABSTRACT:
A thin film transistor in which a device active layer is formed on an insulation film, in which an interface state density present at the interface between the active layer and the insulation film is set to less than 1.times.10.sup.11 /cm.sup.2. The characteristics of TFT can be enhanced by decreasing the leak current and SRAM memory cell can be provided with easy design for the process and the structure while avoiding increase in the resistance and additional capacitance and ensuring voltage withstand.
REFERENCES:
patent: 4766482 (1988-08-01), Sneltzer et al.
patent: 4883766 (1989-11-01), Ishida et al.
patent: 5053354 (1991-10-01), Tanaka et al.
patent: 5124768 (1992-06-01), Mano et al.
patent: 5130264 (1992-07-01), Troxell et al.
patent: 5166085 (1992-11-01), Wakai et al.
Wolf, "Silicon Processing for the VLSI Era, Volume II", pp. 23-26, 1986, Lattice Press.
Ghandhi, "VLSI Fabrication Principles: Silicon and Gallium Arsenide", pp. 372-373, 1983, John Wiley and Sons.
Kimura Tadayuki
Naiki Ihachi
Negishi Michio
Sasaki Masayoshi
Booth Richard A.
Fourson George
Sony Corporation
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