Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2008-07-08
2008-07-08
Nguyen, Kiet T (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S311000
Reexamination Certificate
active
07397050
ABSTRACT:
A specimen fabrication apparatus, including: an ion beam irradiating optical system to irradiate a sample placed in a chamber, with an ion beam, a specimen holder to mount a specimen separated by the irradiation of the ion beam, a holder cassette to hold the specimen holder, and a sample stage to hold the sample and the holder cassette, wherein said holder cassette is transferred to outside of the chamber in a condition of holding said specimen holder with the specimen mounted.
REFERENCES:
patent: 4030615 (1977-06-01), Guggi et al.
patent: 4128765 (1978-12-01), Franks
patent: 5063294 (1991-11-01), Kawata et al.
patent: 5270552 (1993-12-01), Ohnishi et al.
patent: 5412503 (1995-05-01), Nederlof
patent: 5656811 (1997-08-01), Itoh et al.
patent: 5852298 (1998-12-01), Hatakeyama et al.
patent: 5892225 (1999-04-01), Okihara
patent: 6188068 (2001-02-01), Shaapur et al.
patent: 6188072 (2001-02-01), Chung
patent: 6194720 (2001-02-01), Li et al.
patent: 6538254 (2003-03-01), Tomimatsu et al.
patent: 6664552 (2003-12-01), Shichi et al.
patent: 6717156 (2004-04-01), Sugaya et al.
patent: 6828566 (2004-12-01), Tomimatsu et al.
patent: 6858851 (2005-02-01), Tomimatsu et al.
patent: 6960765 (2005-11-01), Tomimatsu et al.
patent: 7071475 (2006-07-01), Tomimatsu et al.
patent: 218954 (1982-09-01), None
patent: 49-33904 (1974-09-01), None
patent: 4-76437 (1992-03-01), None
patent: 4-248237 (1992-09-01), None
patent: 5-52721 (1993-03-01), None
patent: 5-302876 (1993-11-01), None
patent: 7-333120 (1995-12-01), None
patent: 8-3768 (1996-01-01), None
patent: 8-209340 (1996-08-01), None
patent: 08-304243 (1996-11-01), None
patent: 9-134699 (1997-05-01), None
patent: 9-162098 (1997-06-01), None
patent: 9-189649 (1997-07-01), None
Brady, et al., IBM technical Disclosure Bulletin, Apr. 1991, pp. 280-281.
Guanuzzi, et al., Materials Research Society Symposium, Proceedings 480, Specimen Preparation for Transmission Electron Microscopy of Materials IV, Apr. 2, 1997, pp. 19-27.
Ishitani, et al., Hitachi Review, vol. 45, #1, Feb. 1996, pp. 19-24.
K. Nikawa, New Application of Focused Ion Beam Technique to Failure Analysis and Process Monitoring of VLSI, Proceedings of International Reliability Physics Symposum, (1989), pp. 43-52.
Preparation of TEM Specimens from Whole Wafers Using Focused Ion Beam and In Situ Extraction Techniques, temapp1. Pm6 rev., Jul. 1997.
Saapur, et al., Materials Research Society Symposium, Proceedings 480, Specimen Preparation Electron Microscopy of Materials IV, Apr. 2, 1997, pp. 173-180.
Su, et al., Materials Research Society Symposium, Proceedings 480, Specimen Preparation for Transmission Electron Microscopy of Materials IV, Apr. 2, 1997, pp. 105-117.
T.T. Sheng, et al., FIB Precision TEM Sample Preparation Using Carbon Replica, Proceedings of 6th IPFA 1997, pp. 92-96.
T.T. Sheng, et al., Precision transmission electron microscopy sample preparation using a focused ion beam by extraction method, J. of Vacuum Science and technology B, vol. 15, #3, May/Jun. 1997, pp. 610-613.
Yih-Yuh Doongs, et al., Proceedings of the '97 6th International Symposium on Jul. 21-25, 1997, pp. 80-85.
E. Kirk et al., Microscopy of Semiconducting Materials 1989, Institute of Physics Serial No. 100, pp. 501-506.
T. Nakamura, editor, Lecture on Experimental Physics Part 13 Preparing and Machining Sample, First Edition, pp. 711-713, 1981.
S. Horiuchi, High Resolution Electron Microscope: Principle and Usage, pp. 182, Kyoritu-Shuppan publication (1989).
M. Overwijk et al., Journal of Vacuum Science & Technology B, vol. 11, No. 6, 1993, pp. 2021-2027.
L. Herlinger et al., “TEM Sample Preparation Using A Focused Ion Beam and A Probe Manipulator”, 1996, pp. 199-205.
A. Yamaguchi et al., Journal of Vacuum Science & Technology B, vol. 11, No. 6, 1993, pp. 2016-2020.
S. Morris et al., “A Technique for Preparing TEM Cross Sections to a Specific Area Using the FIB”, ISTFA'91, 1991, pp. 417-427.
J. Szot et al., Journal of Vacuum Science & Technology B, vol. 10, No. 2, 1992, pp. 575-579.
K. Nikawa, “Applications of focused ion beam technique to failure analysis of very large scale integrations: A review”, Journal of Vacuum Science & Technology B, vol. 9, No. 5, 1991, pp. 2566-2577.
T. Ishitani et al., Journal of Vacuum Science & Technology B, vol. 9, No. 5, 1991, pp. 2633-2637.
Certified Copy of U.S. Appl. No. 60/050,019, filed Jun. 16, 1997, Shaapur et al.
Doi Yasunori
Kawanami Yoshimi
Madokoro Yuichi
Tomimatsu Satoshi
Umemura Kaoru
Antonelli, Terry Stout & Kraus, LLP.
Hitachi , Ltd.
Nguyen Kiet T
LandOfFree
Method and apparatus for specimen fabrication does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for specimen fabrication, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for specimen fabrication will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2788238