Method and apparatus for specimen fabrication

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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Reexamination Certificate

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11701415

ABSTRACT:
A system for analyzing a semiconductor device, including: a first specimen fabricating apparatus including: a vacuum chamber in which a sample substrate is placed, an ion beam irradiating optical system for forming a specimen on the sample substrate, a specimen holder to mount the specimen, and a probe for removing the specimen from the sample substrate; a second specimen fabricating apparatus, and an analyzer to analyze the specimen, wherein said first specimen fabrication apparatus has a function to separate the specimen mounted on the specimen holder and the probe in a vacuum condition.

REFERENCES:
patent: 4030615 (1977-06-01), Guggi et al.
patent: 4128765 (1978-12-01), Franks
patent: 5063294 (1991-11-01), Kawata et al.
patent: 5270552 (1993-12-01), Ohnishi et al.
patent: 5412503 (1995-05-01), Nederlof
patent: 5656811 (1997-08-01), Itoh et al.
patent: 5852298 (1998-12-01), Hatakeyama et al.
patent: 5892225 (1999-04-01), Okihara
patent: 6188068 (2001-02-01), Shaapur et al.
patent: 6188072 (2001-02-01), Chung
patent: 6194720 (2001-02-01), Li et al.
patent: 6538254 (2003-03-01), Tomimatsu et al.
patent: 6664552 (2003-12-01), Shichi et al.
patent: 6717156 (2004-04-01), Sugaya et al.
patent: 6828566 (2004-12-01), Tomimatsu et al.
patent: 6858851 (2005-02-01), Tomimatsu et al.
patent: 6960765 (2005-11-01), Tomimatsu et al.
patent: 7071475 (2006-07-01), Tomimatsu et al.
patent: 218954 (1982-09-01), None
patent: 49-33904 (1974-09-01), None
patent: 4-76437 (1992-03-01), None
patent: 4-248237 (1992-09-01), None
patent: 5-52721 (1993-03-01), None
patent: 5-302876 (1993-11-01), None
patent: 7-333120 (1995-12-01), None
patent: 8-3768 (1996-01-01), None
patent: 8-209340 (1996-08-01), None
patent: 08-304243 (1996-11-01), None
patent: 9-134699 (1997-05-01), None
patent: 9-162098 (1997-06-01), None
patent: 9-189649 (1997-07-01), None
Brady, et al., IBM technical Disclosure Bulletin, Apr. 1991, pp. 280-281.
Guanuzzi, et al., Materials Research Society Symposium, Proceedings 480, Specimen Preparation for Transmission Electron Microscopy of Materials IV, Apr. 2, 1997, pp. 19-27.
Ishitani, et al., Hitachi Review, vol. 45, #1, Feb. 1996, pp. 19-24.
K. Nikawa, New Application of Focused Ion Beam Technique to Failure Analysis and Process Monitoring of VLSI, Proceedings of International Reliability Physics Symposum, (1989), pp. 43-52.
Preparation of TEM Specimens from Whole Wafers Using Focused Ion Beam and In Situ Extraction Techniques, temapp1. Pm6 rev., Jul. 1997.
Saapur, et al., Materials Research Society Symposium, Proceedings 480, Specimen Preparation Electron Microscopy of Materials IV, Apr. 2, 1997, pp. 173-180.
Su, et al., Materials Research Society Symposium, Proceedings 480, Specimen Preparation for Transmission Electron Microscopy of Materials IV, Apr. 2, 1997, pp. 105-117.
T.T. Sheng, et al., FIB Precision TEM Sample Preparation Using Carbon Replica, Proceedings of 6th IPFA 1997, pp. 92-96.
T.T. Sheng, et al., Precision transmission electron microscopy sample preparation using a focused ion beam by extraction method, J. of Vacuum Science and technology B, vol. 15, #3, May/Jun. 1997, pp. 610-613.
Yih-Yuh Doongs, et al., Proceedings of the '97 6th International Symposium on Jul. 21-25, 1997, pp. 80-85.
E. Kirk et al., Microscopy of Semiconducting Materials 1989, Institute of Physics Serial No. 100, pp. 501-506.
T. Nakamura, editor, Lecture on Experimental Physics Part 13 Preparing and Machining Sample, First Edition, pp. 711-713, 1981.
S. Horiuchi, High Resolution Electron Microscope: Principle and Usage, pp. 182, Kyoritu-Shuppan publication (1989).
M. Overwijk et al., Journal of Vacuum Science & Technology B, vol. 11, No. 6, 1993, pp. 2021-2024.
L. Herlinger et al., “TEM Sample Preparation Using A Focused Ion Beam and A Probe Manipulator”, 1996, pp. 199-205.
A. Yamaguchi et al., Journal of Vacuum Science & Technology B, vol. 11, No. 6, 1993, pp. 2016-2020.
S. Morris et al., “A Technique for Preparing TEM Cross Sections to a Specific Area Using the FIB”, ISTFA'91, 1991, pp. 417-427.
J. Szot et al., Journal of Vacuum Science & Technology B, vol. 10, No. 2, 1992, pp. 575-579.
K. Nikawa, “Applications of focused ion beam technique to failure analysis of very large scale integrations: A review”, Journal of Vacuum Science & Technology B, vol. 9, No. 5, 1991, pp. 2566-2577.
T. Ishitani et al., Journal of Vacuum Science & Technology B, vol. 9, No. 5, 1991, pp. 2633-2637.
U.S. Appl. No. 60/050,019, filed Jun. 16, 1997, Shaapur et al.

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