Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2007-09-11
2007-09-11
Font, Frank G. (Department: 2883)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S307000
Reexamination Certificate
active
10898592
ABSTRACT:
A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.
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European Search Report dated Jul. 12, 2004.
Fukuda Muneyuki
Ishitani Tohru
Kashima Hideo
Koike Hidemi
Seya Eiichi
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Font Frank G.
Hitachi , Ltd.
Hughes James P.
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