Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-08-07
2007-08-07
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S022000, C977S749000, C977S938000
Reexamination Certificate
active
11056456
ABSTRACT:
A method is provided for doping a carbon nanotube. The method comprises exposing the nanotube to a one-electron oxidant in a solution phase. A method is also provided for forming a carbon nanotube FET device.
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Appears to be Japanese Patent Publication for JP2005-055790; date of publication Mar. 3, 2005; copy consists of 3 pages.
Patent Abstract (English Translation) of JP2005-055790; filing date Jul. 8, 2003; copy consists of 1 unnumbered page.
Afzali-Ardakani Ali
Avouris Phaedon
Chen Jia
Klinke Christian
Solomon Paul M.
Crane Sara
Patterson & Sheridan LLP
Tong, Esq. Kin-Wah
Tuchman, Esq. Ido
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