Method and apparatus for SOI transistor

Details Method and apparatus for SOI transistor Method and apparatus for SOI transistor

1995-03-07

1996-08-20

Monin, Jr., Doanld L.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257559, 257571, 257586, H01L 27082, H01L 2972

Patent

active

055481566

ABSTRACT:
A lateral bipolar transistor capable of forming a narrow-sized diffusion region, such as a base width, is disclosed. The transistor exhibits no scattering in the direction of the depth of the width of the diffusion region. Emitter resistance is reduced by varying an impurity diffusion source at substantially a uniform concentration in a semiconductor portion and forming a diffusion region by diffusion from the impurity diffusion source. The bipolar transistor has an SOI structure. A method of making such device is also disclosed.

REFERENCES:
patent: 3411051 (1968-11-01), Kilby
patent: 4860077 (1989-08-01), Reuss et al.
patent: 5070030 (1991-12-01), Ikeda et al.
patent: 5298786 (1994-03-01), Shahidi et al.
M. Hashimoto, A. Ogasaware, M. Shimanoe, A. Nieda, H. Satoh, A. Yagi and T. Matsushita; Low Leakage SOIMOSFETs Fabricated Using a Wafer Bonding Method; Extended Abstracts of the 21st Conf. on Solid State Devices and Materials, Tokyo, 1989, pp. 89-92.
G. G. Shahidi, D. D. Tang, B. Davari, Y. Taur, P. McFarland, K. Jenkins, D. Danner, Mr. Rodriguez, A. Megdansi, E. Petrilio, and T. H. Ning; A Novel High-Performance Lateral Bipolar on SOI; IBM Research, T. J. Watson Research Center, Yorktown Heights, NY 10598 pp. 26.1.1-26.1.4.
A Thin-Base Laterial Bipolar Transistor Fabricated on Bonded SOI; Fujitsu Laboratories Ltd.; 1991; pp. 5-216-5-217.

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