Method and apparatus for single crystal silicon production

Details Method and apparatus for single crystal silicon production Method and apparatus for single crystal silicon production

1992-03-23

1994-05-24

Chaudhuri, Olik

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117214, 117216, 117 31, 117932, B07D 900

Patent

active

053146670

ABSTRACT:
There is disclosed a method for growing single crystal material, particularly silicon, in modified Czochralski process furnaces and chambers. The Czochralski process equipment is modified to permit continuous addition of polycrystalline material, preferably in dry powdered form to a molten bath of the material that is maintained at a constant shallow depth. For this purpose, a circular baffle is placed within the crucible containing the molten bath of the material, dividing the crucible into an annular feed zone and a central crystal growth zone. A cylindrical boule is withdrawn from the central crystal growth zone. The surrounding walls of the crucible, and graphite cup that supports the crucible, provide a heating and annealing zone in which the boule is continuously annealed as it is withdrawn from the molten pool. Dopants are also introduced into the annular feed zone, either separately or admixed with the polycrystalline material.

REFERENCES:
patent: 4659421 (1987-04-01), Jewett
patent: 4659423 (1987-04-01), Kim et al.
patent: 4894206 (1990-01-01), Yamashita et al.
patent: 5009863 (1991-04-01), Shima et al.
patent: 5126114 (1992-06-01), Kamio et al.

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