Method and apparatus for silicon fusion bonding of silicon subst

Details Method and apparatus for silicon fusion bonding of silicon subst Method and apparatus for silicon fusion bonding of silicon subst

1992-11-17

1993-12-28

Heinrich, Samuel M.

Metal fusion bonding

Process

Diffusion type

228219, 437247, H01C 21461

Patent

active

052732053

ABSTRACT:
A silicon fusion bonding method and apparatus for bonding silicon substrates in wet oxygen atmosphere. The method comprises a stabilizing step of the silicon substrates, which has been processed in a pre-process, in the wet oxygen atmosphere, a primarily bonding step of the silicon substrates to each other and a heat-treating step of the silicon substrates at a high temperature in the wet oxygen atmosphere in order to remove micro-gaps from a junction interface by virtue of filling-up effect of micro-gaps by interfacial oxide growing. The present apparatus includes a hollow quartz tub having a stabilization part and a heat-treating part, a flask for providing the wet oxygen atmosphere for the quartz tub, a heater for heating the heat-treating part of the quartz tub and a movable carrier for moving between the stabilization and heat-treating parts of the quartz tub as carrying thereon the silicon substrates in such a manner that the silicon substrates are spaced apart from each other with a quartz spacer interposed therebetween when they are stabilized and come into contact with each other by removing of the quartz spacer when they are heat-treated.

REFERENCES:
patent: 4700466 (1987-10-01), Nakagawa et al.

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