Method and apparatus for sensing a state of a memory cell

Details Method and apparatus for sensing a state of a memory cell Method and apparatus for sensing a state of a memory cell

2007-04-10

2007-04-10

Mai, Son L. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S208000

Reexamination Certificate

active

11172367

ABSTRACT:
A cell arrangement comprising a memory cell arranged in parallel to a first capacitor is charged to a first voltage potential. A second capacitor is charged to a second voltage potential, which is higher than the first voltage potential. The second capacitor is connected to the cell arrangement while the voltage over the cell arrangement comprising the first capacitor is kept constant. The resulting current from the second capacitor through the memory cell is used to detect the state of the memory cell.

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