Etching a substrate: processes – Forming or treating electrical conductor article – Adhesive or autogenous bonding of self-sustaining preforms
Patent
1994-07-13
1995-08-01
Hearn, Brian E.
Etching a substrate: processes
Forming or treating electrical conductor article
Adhesive or autogenous bonding of self-sustaining preforms
437 62, 437974, 148DIG12, 148DIG135, 216 52, 216 99, H01L 21306
Patent
active
054377625
ABSTRACT:
The invention concerns a method of forming various kinds of SOI structures and semiconductor memory devices using the forming technique. It is useful, for example, in SRAM or EEPROM devices. In EEPROM, it relates, in particular, to a method of manufacturing a non-volatile memory device in which a control gate electrode layer is laminated by way of an insulator film on a floating gate electrode layer. It includes a method of manufacturing a structure via the steps of forming an etching stopping layer on the surface of a silicon substrate, forming an epitaxially grown silicon layer on said etching stopping layer, bonding said silicon substrate formed with said silicon layer with another substrate as the insulator substrate, grinding said silicon substrate from the rear face and etching it until said etching stopping layer is exposed and removing said etching stopper layer, with or without polishing the other surface of said silicon substrate.
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Hashimoto Makoto
Matsushita Takeshi
Ochiai Akihiko
Sato Hiroshi
Shimanoe Muneharu
Dang Trung
Hearn Brian E.
Siemens Aktiengesellschaft
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