Method and apparatus for selective deposition

Details Method and apparatus for selective deposition Method and apparatus for selective deposition

2007-11-13

2007-11-13

Menz, Douglas M. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S750000, C257S758000

Reexamination Certificate

active

11011324

ABSTRACT:
A method for selectively depositing a source material on a wafer is disclosed. In one embodiment, a wafer is having at least one recessed feature is provided. A top surface of the wafer is then coated with an inhibiting material. Finally, a source material is selectively deposited in the at least one recessed feature, the source material repelled by the inhibiting material. In another embodiment, the inhibiting material is one of a wax, a surfactant or an oil.

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Office Action from U.S. Appl. No. 10/404,775 mailed Nov. 8, 2006, 12 pgs.

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