Metal working – Barrier layer or semiconductor device making
Patent
1991-09-10
1993-06-01
Chaudhuri, Olik
Metal working
Barrier layer or semiconductor device making
310313R, 310313B, H01L 4108
Patent
active
052155463
ABSTRACT:
A passivation layer of dielectric material disposed on the top surface of the SAW device prevents the metallized transducer pattern on the piezoelectric substrate from being exposed to chemical attack. This layer also provides for improved metal acousto-migration resistance through the well-known mechanism of grain boundary pinning. The piezoelectric SAW device substrate includes a dielectric layer which is disposed along the surface over the transducer metallization. The piezoelectric substrate includes metallized regions on top of the dielectric layer which is disposed over the substrate surface and the SAW transducers thereon. These metallized regions form capacitors to the transducer busses and capacitively couple electrical input and output signals to the transducers from external electronic apparatus.
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Cho Fred Y.
Falkner, Jr. Robert F.
Penunuri David
Chaudhuri Olik
Fliegel Frederick M.
Horton Ken
Motorola Inc.
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