Method and apparatus for removing photoresist using UV and ozone

Details Method and apparatus for removing photoresist using UV and ozone Method and apparatus for removing photoresist using UV and ozone

1995-12-29

1998-01-20

Warden, Jill

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

134 1, 134 2, 134 32, B08B 700

Patent

active

057097542

ABSTRACT:
A method and apparatus for removing photoresist from a substrate such as a semiconductor wafer are provided. The method includes placing the substrate in a reaction chamber containing an oxidizing gas that includes an ozone/oxygen mixture. At the same time, a UV laser beam is directed across the surface of the photoresist for driving an oxidation reaction. Specifically, the oxone decomposes into atomic and diatomic oxygen which react with carbon in the photoresist to form gaseous by-products such as (CO) and (CO.sub.2). These by-products are continuously exhausted from the reaction chamber by an evacuation pump. The method can be performed in stages wherein a first oxidizing gas comprising (O.sub.2) is used to remove a bulk of the photoresist and a second oxidizing gas comprising (O.sub.3 /O.sub.2) is used to remove a remaining portion of the photoresist.

REFERENCES:
patent: 4341592 (1982-07-01), Shortes et al.
patent: 4885047 (1989-12-01), Ury et al.
patent: 5114834 (1992-05-01), Nachshon
patent: 5173441 (1992-12-01), Yu et al.
patent: 5206515 (1993-04-01), Elliott et al.
patent: 5215592 (1993-06-01), Jackson
patent: 5346586 (1994-09-01), Keller

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