Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-01-31
2006-01-31
Vinh, Lan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S714000, C134S001100
Reexamination Certificate
active
06992011
ABSTRACT:
A cleaning method is provided using a cleaning gas mixture of hydrogen and inert gas, for example a mixture in which the hydrogen content is between 20 percent and 80 percent by volume, provided to the chamber of a semiconductor wafer processing apparatus and an ICP power source only to generate a high density plasma in the gas mixture without biasing the surface to be cleaned. In examples of the invention, Si and SiO2contaminants or CFx contaminants are cleaned from a silicon contact prior to subsequent metal deposition. In another example of the invention, silicon residue is cleaned from internal chamber surfaces before oxide etching to recover the baseline oxide etch rate.
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Guidotti Emmanuel
Leusink Gert
Nemoto Takenao
Tokyo Electron Limited
Vinh Lan
Wood Herron & Evans LLP
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