Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-07-31
2007-07-31
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S464000, C257S465000, C257S292000, C257SE31073
Reexamination Certificate
active
11029100
ABSTRACT:
An improved CMOS sensor integrated circuit is disclosed, along with methods of making the circuit and computer readable descriptions of the circuit.
REFERENCES:
patent: 5835141 (1998-11-01), Ackland et al.
patent: 6630701 (2003-10-01), Rhodes
patent: 6809358 (2004-10-01), Hsieh et al.
patent: 6815743 (2004-11-01), Rhodes
patent: 6825878 (2004-11-01), Rhodes
patent: 2002/0008767 (2002-01-01), Lee
patent: 2003/0193597 (2003-10-01), Fossum et al.
patent: 2004/0053436 (2004-03-01), Rhodes
patent: 2004/0094784 (2004-05-01), Rhodes et al.
patent: 2004/0135209 (2004-07-01), Hsieh et al.
patent: 2004/0173799 (2004-09-01), Patrick
patent: 2004/0188727 (2004-09-01), Patrick
patent: 2005/0001248 (2005-01-01), Rhodes
Ikuko Inoue et al. “New LV-BPD (Low Voltage Buried Photo-Diode) for CMOS Imager” IEEE 1999 pp. 883-886.
Abbas El Gamal “Trends in CMOS Image Sensor Technology and Design” International Electron Devices Meeting Digest of Technical Papers, Dec. 2002 consisting of 4 pages.
Pierre Magnan “Detection of Visible Photons in CCD and CMOS: A Comparative View”, Nuclear Instruments and Methods in Physics Research A 504 (2003) pp. 199-212.
H. Rhodes et al. “CMOS Imager Technology Shrinks and Image Performance” IEEE 2004, pp. 7-18.
Yasuyuki Endo et al. “4-micron Pixel CMOS Image Sensor With Low Image Lag and High-Temperature Operability”, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications IV, SPIE vol. 5017 (2003), pp. 196-204.
Keiji Mabuchi et al. “CMOS Image Sensors Comprised of Floating Diffusion Driving Pixels With Buried Photodiode” IEEE Journal of Solid-State Circuits, vol. 39, No. 12, Dec. 2004, pp. 2408-2416.
U.S. Appl. No. 10/732,583, filed Dec. 10, 2003, entitled “Device and Method for Image Sensing”, inventors Selim Bencuya, Jiafu Luo and Richard Mann.
Bencuya Selim
Manrt Richard
Toros Zeynep
ESS Technology, Inc.
Haynes Beffel & Wolfeld LLP
Ho Tu-Tu
Suzue Kenta
LandOfFree
Method and apparatus for removing electrons from CMOS sensor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for removing electrons from CMOS sensor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for removing electrons from CMOS sensor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3732258