Semiconductor device manufacturing: process – Making passive device – Trench capacitor
Reexamination Certificate
2006-07-18
2006-07-18
Mai, Anh Duy (Department: 2814)
Semiconductor device manufacturing: process
Making passive device
Trench capacitor
C438S397000
Reexamination Certificate
active
07078308
ABSTRACT:
A microelectronic substrate and method for removing adjacent conductive and nonconductive materials from a microelectronic substrate. In one embodiment, the microelectronic substrate includes a substrate material (such as borophosphosilicate glass) having an aperture with a conductive material (such as platinum) disposed in the aperture and a fill material (such as phosphosilicate glass) in the aperture adjacent to the conductive material. The fill material can have a hardness of about 0.04 GPa or higher, and a microelectronics structure, such as an electrode, can be disposed in the aperture, for example, after removing the fill material from the aperture. Portions of the conductive and fill material external to the aperture can be removed by chemically-mechanically polishing the fill material, recessing the fill material inwardly from the conductive material, and electrochemically-mechanically polishing the conductive material. The hard fill material can resist penetration by conductive particles, and recessing the fill material can provide for more complete removal of the conductive material external to the aperture.
REFERENCES:
patent: 2315695 (1943-04-01), Faust
patent: 2516105 (1950-07-01), der Mateosian
patent: 3239439 (1966-03-01), Helmke
patent: 3334210 (1967-08-01), Williams et al.
patent: 4839005 (1989-06-01), Katsumoto et al.
patent: 5098533 (1992-03-01), Duke et al.
patent: 5162248 (1992-11-01), Dennison et al.
patent: 5244534 (1993-09-01), Yu et al.
patent: 5300155 (1994-04-01), Sandhu et al.
patent: 5344539 (1994-09-01), Shinogi et al.
patent: 5562529 (1996-10-01), Kishii et al.
patent: 5567300 (1996-10-01), Datta et al.
patent: 5575885 (1996-11-01), Hirabayashi et al.
patent: 5618381 (1997-04-01), Doan et al.
patent: 5624300 (1997-04-01), Kishii et al.
patent: 5676587 (1997-10-01), Landers et al.
patent: 5681423 (1997-10-01), Sandhu et al.
patent: 5780358 (1998-07-01), Zhou et al.
patent: 5807165 (1998-09-01), Uzoh et al.
patent: 5840629 (1998-11-01), Carpio
patent: 5843818 (1998-12-01), Joo et al.
patent: 5846398 (1998-12-01), Carpio
patent: 5863307 (1999-01-01), Zhou et al.
patent: 5888866 (1999-03-01), Chien
patent: 5897375 (1999-04-01), Watts et al.
patent: 5911619 (1999-06-01), Uzoh et al.
patent: 5930699 (1999-07-01), Bhatia
patent: 5934980 (1999-08-01), Koos et al.
patent: 5952687 (1999-09-01), Kawakubo et al.
patent: 5954975 (1999-09-01), Cadien et al.
patent: 5954997 (1999-09-01), Kaufman et al.
patent: 5972792 (1999-10-01), Hudson
patent: 5993637 (1999-11-01), Hisamatsu et al.
patent: 6001730 (1999-12-01), Farkas et al.
patent: 6007695 (1999-12-01), Knall et al.
patent: 6010964 (2000-01-01), Glass
patent: 6024856 (2000-02-01), Haydu et al.
patent: 6033953 (2000-03-01), Aoki et al.
patent: 6039633 (2000-03-01), Chopra
patent: 6046099 (2000-04-01), Cadien et al.
patent: 6051496 (2000-04-01), Jang
patent: 6060386 (2000-05-01), Givens
patent: 6060395 (2000-05-01), Skrovan et al.
patent: 6063306 (2000-05-01), Kaufman et al.
patent: 6066030 (2000-05-01), Uzoh
patent: 6066559 (2000-05-01), Gonzalez et al.
patent: 6068787 (2000-05-01), Grumbine et al.
patent: 6083840 (2000-07-01), Mravic, et al.
patent: 6100197 (2000-08-01), Hasegawa
patent: 6103096 (2000-08-01), Datta et al.
patent: 6103628 (2000-08-01), Talieh
patent: 6103636 (2000-08-01), Zahorik, et al.
patent: 6115233 (2000-09-01), Seliskar et al.
patent: 6117781 (2000-09-01), Lukanc et al.
patent: 6121152 (2000-09-01), Adams et al.
patent: 6132586 (2000-10-01), Adams et al.
patent: 6143155 (2000-11-01), Adams et al.
patent: 6162681 (2000-12-01), Wu
patent: 6171467 (2001-01-01), Weihs et al.
patent: 6174425 (2001-01-01), Simpson et al.
patent: 6176992 (2001-01-01), Talieh
patent: 6180947 (2001-01-01), Stickel et al.
patent: 6187651 (2001-02-01), Oh
patent: 6190494 (2001-02-01), Dow
patent: 6196899 (2001-03-01), Chopra et al.
patent: 6197182 (2001-03-01), Kaufman et al.
patent: 6206756 (2001-03-01), Chopra et al.
patent: 6218309 (2001-04-01), Miller et al.
patent: 6250994 (2001-06-01), Chopra et al.
patent: 6259128 (2001-07-01), Adler et al.
patent: 6273786 (2001-08-01), Chopra et al.
patent: 6276996 (2001-08-01), Chopra
patent: 6280581 (2001-08-01), Cheng
patent: 6287974 (2001-09-01), Miller
patent: 6299741 (2001-10-01), Sun et al.
patent: 6313038 (2001-11-01), Chopra et al.
patent: 6322422 (2001-11-01), Satou
patent: 6328632 (2001-12-01), Chopra
patent: 6368184 (2002-04-01), Beckage
patent: 6368190 (2002-04-01), Easter et al.
patent: 6379223 (2002-04-01), Sun et al.
patent: 6395607 (2002-05-01), Chung
patent: 6416647 (2002-07-01), Dordi et al.
patent: 6455370 (2002-09-01), Lane
patent: 6461911 (2002-10-01), Ahn et al.
patent: 6464855 (2002-10-01), Chadda et al.
patent: 6852630 (2002-10-01), Basol et al.
patent: 6504247 (2003-01-01), Chung
patent: 6867136 (2003-06-01), Basol et al.
patent: 6620037 (2003-09-01), Kaufman et al.
patent: 6689258 (2004-02-01), Lansford et al.
patent: 6693036 (2004-02-01), Nogami et al.
patent: 6848970 (2004-03-01), Manens et al.
patent: 6722942 (2004-04-01), Lansford et al.
patent: 6753250 (2004-06-01), Hill et al.
patent: 6776693 (2004-08-01), Duboust et al.
patent: 6780772 (2004-08-01), Uzoh et al.
patent: 6893328 (2004-10-01), So
patent: 6881664 (2005-04-01), Catabay et al.
patent: 2001/0025976 (2001-10-01), Sandhu et al.
patent: 2001/0036746 (2001-11-01), Sato et al.
patent: 2002/0025759 (2002-02-01), Lee et al.
patent: 2002/0025760 (2002-02-01), Lee et al.
patent: 2002/0025763 (2002-02-01), Lee et al.
patent: 2002/0052126 (2002-05-01), Lee et al.
patent: 2002/0070126 (2002-06-01), Sato et al.
patent: 2002/0104764 (2002-08-01), Banerjee et al.
patent: 2002/0108861 (2002-08-01), Emesh et al.
patent: 2002/0115283 (2002-08-01), Ho et al.
patent: 2003/0064669 (2003-04-01), Basol et al.
patent: 2003/0109198 (2003-06-01), Lee et al.
patent: 2003/0178320 (2003-09-01), Liu et al.
patent: 2004/0043705 (2004-03-01), Lee et al.
patent: 2004/0192052 (2004-09-01), Mukherjee et al.
patent: 2004/0259479 (2004-12-01), Sevilla
patent: 2005/0059324 (2005-03-01), Lee et al.
patent: 2005/0133379 (2005-06-01), Basol et al.
patent: 2005/0173260 (2005-08-01), Basol et al.
patent: 2005/0178743 (2005-08-01), Manens et al.
patent: 0459397 (1991-12-01), None
patent: 0459397 (1991-12-01), None
patent: EP 1 123 956 (2001-08-01), None
patent: 1-241129 (1989-09-01), None
patent: 2001077117 (2001-03-01), None
patent: JP 2001077117 (2001-03-01), None
patent: WO 00/26443 (2000-05-01), None
patent: WO 00/26443 (2000-05-01), None
patent: WO 00/28586 (2000-05-01), None
patent: WO 00/28586 (2000-05-01), None
patent: WO 00/32356 (2000-06-01), None
patent: WO 00/59008 (2000-10-01), None
patent: WO 00/59008 (2000-10-01), None
patent: WO 00/59682 (2000-10-01), None
patent: WO 02/064314 (2002-08-01), None
U.S. Appl. No. 09/651,779, filed Aug. 30, 2000, Moore.
U.S. Appl. No. 09/651,808, filed Aug. 30, 2000, Chopra et al.
U.S. Appl. No. 09/653,392, filed Aug. 31, 2000, Chopra et al.
U.S. Appl. No. 10/090,869, filed Mar. 4, 2002, Moore et al.
U.S. Appl. No. 10/230,463, filed Aug. 29, 2002, Lee et al.
U.S. Appl. No. 10/230,973, filed Aug. 29, 2002, Chopra.
U.S. Appl. No. 10/230,602, filed Aug. 29, 2002, Chopra.
U.S. Appl. No. 10/230,970, filed Aug. 29, 2002, Lee et al.
U.S. Appl. No. 10/230,972, filed Aug. 29, 2002, Lee et al.
D'Heurle, F. M. and K.C. Park, IBM Technical Disclosure Bulletin, Electrolytic Process for Metal Pattern Generation, vol. 17, No. 1, pp. 271-272, Jun. 1974, XP-002235692, NN 7406271.
Frankenthal, R.P. and Eaton, D. H., “Electroetching of Platinum in the Titanium-Platinum-Gold Metallization on Silicon Integrated Circuits, ” Journal of The Electrochemical Society, Vol. 123, No. 5, pp. 703-706, May 1976, Pennington, New Jersey.
Aboaf, J.A. and R. W. Broadie, IBM Technical Disclosure Bulletin, Rounding of Square-Shape Holes in Silicon Wafers, vol. 19, No. 8, p. 3042, Jan. 1977, XP- 002235690, NN 77013042.
Bassous, E., IBM Technical Disclosure Bulletin, Low Temperature Methods for Rounding Silicon Nozzles, Vol. 20, No. 2, Jul. 1977, pp. 810-811, XP-002235692, NN7707810.
PCT Internationa
Blalock Guy
Lee Whonchee
Meikle Scott G.
Duy Mai Anh
Micro)n Technology, Inc.
Perkins Coie LLP
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