Method and apparatus for releasing a semiconductor wafer from an

Coating apparatus – Gas or vapor deposition – Work support

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361234, 269 8, C23C 1600, B25B 1100, H01G 300, H01T 2300

Patent

active

054746140

ABSTRACT:
A method and apparatus is provided for effectively releasing a semiconductor wafer (36) from a deactivated electrostatic clamp (20) by diffusing a neutralizing gas into the space between the clamping surface of the electrostatic clamp and the surface of the wafer, generating an ionizing voltage with an alternating polarity, and applying the alternating polarity ionizing voltage to the diffusing gas to neutralize the residual electrostatic charges remaining on the surfaces of the clamp (20) and the wafer (36).

REFERENCES:
patent: 5055964 (1991-10-01), Logan et al.
patent: 5213349 (1993-05-01), Elliott
Philip C. D. Hobbs, et al., "Reviewing Clean Corona Discharge, Laser-Produced Plasma Ionization Technologies," Microcontamination, Jun., 1991, pp. 19-26.

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