Coating processes – Electrical product produced – Welding electrode
Patent
1986-05-29
1988-07-12
Newsome, John H.
Coating processes
Electrical product produced
Welding electrode
427253, 427140, B05D 306, B32B 3500, C23C 1600
Patent
active
047569271
ABSTRACT:
A laser induced direct writing pyrolysis of a refractory metal or metal silicide on substrates is described. Typical reactants comprise flowing WF.sub.6, MoF.sub.6 or TiCl.sub.4 with SiH.sub.4 and an inert gas, such as Argon. A preferable substrate surface is a polyimide film. The refractory metal film may comprise low resistivity W, M, or Ti, or silicides thereof, having a predetermined resistance depending on the relative ratio of reactants. The invention is useful, inter alia, for repair of defective circuit interconnects, and formation of interconnects or resistors on substrates.
REFERENCES:
patent: 4404235 (1983-09-01), Tarng et al.
patent: 4505949 (1985-03-01), Jelks
patent: 4508749 (1985-04-01), Brannon et al.
patent: 4540607 (1985-09-01), Tsao
patent: 4543270 (1985-09-01), Oprysko et al.
patent: 4568565 (1986-02-01), Gupta et al.
patent: 4579750 (1986-04-01), Bowen et al.
patent: 4624736 (1986-11-01), Gee et al.
patent: 4654223 (1987-03-01), Araps et al.
patent: 4656050 (1987-04-01), Araps et al.
Lo et al, "A CVD Study of the Tungsten-Silicon System", Chemical Vapor Deposition, 4th intern. conference.
"Direct-Write Metallization of Silicon MOSFETs Using Laser Photodeposition", IEEE Electron Device Lett., vol. EDL-5, p. 32, 1984, Tsao et al.
"CVD Tungsten and Tungsten Silicide for VLSI Applications", Semiconductor International, vol. 8, p. 306, 1985, Sachdev et al.
"Laser-Induced Selective Deposition of Tungsten on Silicon", J. Vac. Sci. Technol., vol. B3, p. 1441, 1985, Liu et al.
"Wafer-Scale Laser Pantography: Physics of Direct Laser-Writing Micron-Dimension Transistors", Laser-Controlled Chemical Processing of Surfaces, 1984, Johnson et al.
"Vapor Deposited Tungsten as a Metallization and Interconnection Material for Silicon Devices", RCA Review, vol. 31, p. 360, 1970, Shaw et al.
"Comparison of Laser-Initiated and Thermal Chemical Vapor Deposition of Tungsten Films", Appl. Phys. Lett., vol. 45, p. 623, Deutsch et al.
"Deposition of Metal Films by Laser-Controlled CVD", 4th Int. Conf. Chem. Vapor Dep., p. 196, (1973), Berg et al.
"Lower Pressure Chemical Vapor Deposition of Tungsten on Polycrystalline and Single Crystal Silicon via the Silicon Reduction", J. Electrochem. Soc., vol. 141, p. 2702, 1984, Tsao et al.
"Interfacial Structure of Tungsten Layers Formed by Selective Low Pressure Chemical Vapor Deposition", J. Electrochem. Soc., vol. 132, p. 444, 1985, Stacy et al.
"Structure of Selective Low Pressure Chemical Vapor-Deposited Films of Tungsten", J. Electrochem. Soc., vol. 132, p. 1243, 1985, Green et al.
"Laser Microphoto Chemistry for Use in Solid-State Electronics", IEEE J. Quantum Electronic QE-16, p. 1233, 1980, Ehrlich et al.
Black Jerry G.
Ehrlich Daniel J.
Massachusetts Institute of Technology
Newsome John H.
Padgett Marianne L.
LandOfFree
Method and apparatus for refractory metal deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for refractory metal deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for refractory metal deposition will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-663607