Method and apparatus for reducing the critical dimension differe

Details Method and apparatus for reducing the critical dimension differe Method and apparatus for reducing the critical dimension differe

1996-12-20

1999-05-18

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Plural exposure steps

430397, 430312, 2504922, G03F5/00

Patent

active

059050209

ABSTRACT:
A method and apparatus for printing vertically and horizontally aligned features having reduced, substantially equal, critical dimensions on a photoresist-coated semiconductor wafer are disclosed. Radiant energy is passed through a pattern transfer tool to irradiate a first region of the wafer when the wafer is at a first position relative to the pattern transfer tool. The wafer is then positioned at a second position relative to the pattern transfer tool offset from the first position by a first distance along an axis aligned with the horizontal features and by a second distance along an axis aligned with the vertical features. The second distance is different from the first distance by a compensation distance. Radiant energy is then passed through the pattern transfer tool to irradiate a second region of the wafer region defining a second side of each of the horizontally and vertically aligned features.

REFERENCES:
patent: 5281996 (1994-01-01), Bruning et al.
patent: 5503959 (1996-04-01), Langston
Silicon Processing For The VLSI Era, vol. 1-Process Technology, S. Wolf and R.N. Tauber, pp. 407-492.
"Product Description for the Micrascan II", pp. 1-1-4-4, Nov. 11, 1994.
"The Ultimate Lithography Solution For 0.5 .mu.m to 0.25 .mu.m", 4 pages, 1992.

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