Method and apparatus for reducing substrate charging damage

Details Method and apparatus for reducing substrate charging damage Method and apparatus for reducing substrate charging damage

2006-09-19

2006-09-19

Deo, Duy-Vu N (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S714000

Reexamination Certificate

active

07109122

ABSTRACT:
The present invention presents a method and apparatus for reducing charging damage to a substrate is described. In particular, a method of operating a plasma processing system is described that leads to the removal of, or significant reduction of, the accumulated charge on the substrate.

REFERENCES:
patent: 5866483 (1999-02-01), Shiau et al.
patent: 5874361 (1999-02-01), Collins et al.
patent: 5928528 (1999-07-01), Kubota et al.
patent: 5983828 (1999-11-01), Savas
patent: 6008139 (1999-12-01), Pan et al.
patent: 6085688 (2000-07-01), Lymberopoulos et al.
patent: 6471821 (2002-10-01), Ogino et al.
patent: 6544895 (2003-04-01), Donohoe
patent: 2001/0023743 (2001-09-01), Savas
patent: 0 710 977 (1996-05-01), None
patent: 10284297 (1998-10-01), None
patent: WO 2004/051710 (2004-06-01), None

Affiliated with

Also associated with

Rating

Method and apparatus for reducing substrate charging damage does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for reducing substrate charging damage, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for reducing substrate charging damage will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3542001