Method and apparatus for reducing programmed volume of phase...

Details Method and apparatus for reducing programmed volume of phase... Method and apparatus for reducing programmed volume of phase...

2011-06-21

2011-06-21

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S004000, C257S005000, C257SE45002, C438S102000

Reexamination Certificate

active

07964861

ABSTRACT:
A phase change memory includes a volume of phase change material disposed between, and coupled to, two electrodes, with the composition of a region of at least one of the two electrodes or phase change material having been compositionally altered to reduce the programmed volume of the phase change material.

REFERENCES:
patent: 2007/0097739 (2007-05-01), Happ et al.
patent: 2007/0147109 (2007-06-01), Kim
patent: 2008/0121862 (2008-05-01), Liu
patent: 2009/0261316 (2009-10-01), Liu

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