Static information storage and retrieval – Floating gate – Particular biasing
Patent
1999-03-01
2000-10-17
Nelms, David
Static information storage and retrieval
Floating gate
Particular biasing
36518518, 36518524, 36518533, G11C 1604
Patent
active
061341495
ABSTRACT:
A method and an apparatus is provided to decrease the erase current level by subdividing the memory array into small segments and cycle through complete address space sequentially during the chip erase operation. Therefore, the transient erase current is proportionally reduced and is still within the current driving capability of an on-chip pump when a smaller memory segment is chosen. Furthermore, a chip erase operation can be divided into two stages. During the first stage of the chip erase operation, chip erase current is high and is supplied through a V.sub.CC power supply that can deliver a high current, but not a high enough voltage to ensure sufficient erasure of memory cells. During the second stage of the chip erase operation, the erase current is much lower and is supplied through an on-chip charge pump that can deliver much higher voltage than the V.sub.CC power supply to ensure the memory cell array is properly erased.
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Auduong Gene N.
Integrated Memory Technologies, Inc.
Nelms David
Yin Ronald L.
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