Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2005-03-08
2005-03-08
Eckert, George (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S632000, C257S650000, C438S778000, C438S781000, C438S782000, C438S787000, C438S789000
Reexamination Certificate
active
06864561
ABSTRACT:
The fixed charge in a borophosphosilicate glass insulating film deposited on a semiconductor device is reduced by reacting an organic precursor such as TEOS with O3. When done at temperatures higher than approximately 480 degrees C., the carbon level in the resulting film appears to be reduced, resulting in a higher threshold voltage for field transistor devices.
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Iyer Ravi
Rhodes Howard E.
Thakur Randhir P. S.
Eckert George
Schwegman Lundberg Woessner & Kluth P.A.
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