Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1993-03-30
1994-08-30
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257229, 257230, 307311, 348250, 348251, 348313, H01L 2714
Patent
active
053430590
ABSTRACT:
A method and apparatus for reducing bloom in an output of a charge coupled device (CCD) image sensor is disclosed. The method includes the step of toggling at least two phases of said CCD after exposure of said CCD. The method and apparatus are particularly useful when a flash of light occurs during the exposure.
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patent: 5122850 (1992-06-01), Burkey
Heyns et al., "The Resistive Gate CTD Area-Image Sensor; "IEEE Transactions on Electron Devices, vol. ED-25, No. 2, Feb. 1978, pp. 135-139.
Furukawa et al., "An Interline Transfer CCD For A Single Sensor 2/3 Color Comera," Conference: International Electron Devices Meeting Technical Digest, Washington, D.C., U.S.A., Dec. 8-10, 1980 pp. 346-349.
"Electronic Components and Circuits", NASA's Jet Propulsion Laboratory, Pasadena, California, NASA Tech Briefs, Jul. 1992, pp. 20, 22, 28.
Leaf Systems, Inc.
Mintel William
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