Method and apparatus for quantitative quality inspection of...

Details Method and apparatus for quantitative quality inspection of... Method and apparatus for quantitative quality inspection of...

2006-03-14

2006-03-14

Rosenberger, Richard A. (Department: 2877)

Optics: measuring and testing

Inspection of flaws or impurities

C356S630000

Reexamination Certificate

active

07012680

ABSTRACT:
A method for a quantitative evaluation of a substrate such as wafer defines a number of sequential first regions so that each of the first regions overlaps the adjacent region. A surface data (e.g., thickness data) in each of the first regions is used to determine a normal vector representing a surface configuration (e.g., thickness variation) of the first region. Then, an angular difference between the normal vectors is determined for each combination of adjacent two first regions. Subsequently, the determined angular difference is compared with a reference to evaluate a quality of a second region including at least one of the first regions, e.g., chip region, strip-like region and/or the entire of the wafer.

REFERENCES:
patent: 4523973 (1985-06-01), Nelson
patent: 6480286 (2002-11-01), Kubo et al.
patent: 11-195054 (1999-07-01), None
patent: 11-201747 (1999-07-01), None
SEMI M1-0701E“Specification for Polished Monocrystalline Silicon Wafers”, SEMI M1-0701E© SEMI 1978, 2001, pp. 1-26.
SEMI M1.15-1000 “Standard for 300mm Polished Monocrystalline Silicon Wafers (Notched)”, pp. 1-3, SEMI M1.15-1000 © SEMI 1978, 2001.

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