Method and apparatus for purifying silicon

Chemistry of inorganic compounds – Silicon or compound thereof – Elemental silicon

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204164, C01B 3302

Patent

active

051820919

ABSTRACT:
Disclosed herein are a method and apparatus for purifying silicon, which are suitable for economical and mass production of high-purity silicon for solar cells from regular-grade silicon containing boron and carbon in large quantities. The method comprises directing a plasma jet stream of an inert gas toward the surface of molten silicon held in a container lined with silica or a silica-based refractory. For improved purification, the inert gas as the plasma gas is mixed with 0.1-10 vol % steam and/or less than 1 g of silica powder per liter of the inert gas at normal state. Alternatively, the container may have a bottom opening and is provided with an electrode having a cooling means underneath the bottom of the container, with the electrode and the cathode of the plasma torch connected to a power source for plasma generation, so that the plasma jet and electron beam are directed toward the surface of molten silicon.

REFERENCES:
patent: 4377564 (1983-03-01), Dahlberg
patent: 4379777 (1983-04-01), Boulus
patent: 4680096 (1987-07-01), Dosaj et al.

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