Method and apparatus for pulse I-V semiconductor measurements

Details Method and apparatus for pulse I-V semiconductor measurements Method and apparatus for pulse I-V semiconductor measurements

2007-10-09

2007-10-09

Barlow, John (Department: 2863)

Data processing: measuring, calibrating, or testing

Measurement system in a specific environment

Electrical signal parameter measurement system

C702S066000, C702S057000

Reexamination Certificate

active

10952647

ABSTRACT:
A method for measuring a value of an electrical characteristic of a device under test in a circuit having a load impedance includes applying a voltage to said circuit, the voltage having a selected amplitude; measuring a current in the circuit in response to the voltage; calculating an error value using the impedance, amplitude and current; adjusting the amplitude using the error value; and repeating the preceding steps until the error value reaches a desired value. This results in the selected amplitude changing from an initial value to a final value and the current changing to a final value. The initial value of the selected amplitude and the final value of the current are used to determine the electrical characteristic value.

REFERENCES:
patent: 5652712 (1997-07-01), Szczebak et al.
Jenkins, Keith A., et al., “Characteristics of SOI FET's Under Pulsed Conditions”, IEEE Transactions on Electron Devices, vol. 44, No. 11, Nov. 1997, pp. 1923-1930.

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