Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1994-01-18
1996-01-23
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 18, 117214, C30B 1520
Patent
active
054858020
ABSTRACT:
A crucible is situated in a vacuum chamber and provided with a feeder for granulate material, heating elements for melting the material, and a crystal puller above the crucible. Measuring elements provide signals for a controller including a fuzzy processor utilizing an empirically determined data field to output a signal for the material feeder.
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Mahyon et al., Neural Network and Fuzzy Models For Real Time Control of a CVD Epitacral Reactor, Proc. SPIE-Int. Soc. Opt. Eng. (1992).
Altekruger Burkhard
Aufreiter Joachim
Flachsel Martin
Gesche Roland
Garrett Felisa
Kunemund Robert
Leybold Aktiengesellschaft
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