Method and apparatus for pulling a monocrystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

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C30B 3500

Patent

active

060154608

ABSTRACT:
A method and an apparatus for pulling a silicon monocrystal from a melt iudes the pulling of a conical portion in each case at the beginning and at the end of the monocrystal and the pulling of a cylindrical portion between the conical portions. In this method, the surface of the conical portion at the beginning of the monocrystal is shielded by a shielding means spaced apart from the monocrystal.

REFERENCES:
patent: 4078897 (1978-03-01), Jericho
patent: 5361721 (1994-11-01), Takano et al.
patent: 5578123 (1996-11-01), Vilzmann et al.

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