Method and apparatus for proximate CMOS pixels

Details Method and apparatus for proximate CMOS pixels Method and apparatus for proximate CMOS pixels

2004-12-30

2009-12-22

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular signal path connections

C257S291000, C257S292000, C257S293000

Reexamination Certificate

active

07635880

ABSTRACT:
An improved CMOS sensor integrated circuit is disclosed, along with methods of making the circuit and computer readable descriptions of the circuit.

REFERENCES:
patent: 5835141 (1998-11-01), Ackland et al.
patent: 6630701 (2003-10-01), Rhodes
patent: 6690423 (2004-02-01), Nakamura et al.
patent: 6809358 (2004-10-01), Hsieh et al.
patent: 6815743 (2004-11-01), Rhodes
patent: 6825878 (2004-11-01), Rhodes
patent: 6919549 (2005-07-01), Bamji et al.
patent: 7078745 (2006-07-01), Patrick
patent: 7091536 (2006-08-01), Rhodes et al.
patent: 7115855 (2006-10-01), Hong
patent: 7148528 (2006-12-01), Rhodes
patent: 2002/0008767 (2002-01-01), Lee
patent: 2003/0193597 (2003-10-01), Fossum et al.
patent: 2004/0046193 (2004-03-01), Park et al.
patent: 2004/0053436 (2004-03-01), Rhodes
patent: 2004/0094784 (2004-05-01), Rhodes et al.
patent: 2004/0135209 (2004-07-01), Hsieh et al.
patent: 2004/0173799 (2004-09-01), Patrick
patent: 2004/0188727 (2004-09-01), Patrick
patent: 2004/0251482 (2004-12-01), Rhodes
patent: 2005/0248673 (2005-11-01), Fowler
patent: 2006/0011952 (2006-01-01), Ohkawa
patent: 2007/0187734 (2007-08-01), Adkisson et al.
lkuko Inoue et al. “New LV-BPD (Low Voltage Buried Photo-Diode) for CMOS Imager” IEEE 1999 pp. 883-886.
Abbas El Gamal “Trends in CMOS Image Sensor Technology and Design” International Electron Devices Meeting Digest of Technical Papers, Dec. 2002 consisting of 4 pages.
Pierre Magnan “Detection of Visible Photons in CCD and CMOS: A Comparative View”, Nuclear Instruments and Methods in Physics Research A 504 (2003) pp. 199-212.
H. Rhodes et al. “CMOS Imager Technology Shrinks and Image Performance” IEEE 2004, pp. 7-18.
Yasuyuki Endo et al. “4-micron Pixel CMOS Image Sensor With Low Image Lag and High-Temperature Operability”, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications IV, SPIE vol. 5017 (2003), pp. 196-204.
Keiji Mabuchi et al. “CMOS Image Sensors Comprised of Floating Diffusion Driving Pixels With Buried Photodiode” IEEE Journal of Solid-State Circuits, vol. 39, No. 12, Dec. 2004, pp. 2408-2416.
U.S. Appl. No. 10/732,583, filed Dec. 10, 2003, entitled “Device and Method for Image Sensing”, inventors Selim Bencuya, Jiafu Luo and Richard Mann.
Nixon et al. “256×256 CMOS Active Pixel Sensor Camera-On-Chip” IEEE Journal of Solid-State Circuits, vol. 31, Issue 12, Dec. 1996, pp. 2046-2050.
Mendis et al. “CMOS Active Pixel Image Sensor” IEEE Transactions on Electroni Devices, vol. 41, Issue 3, Mar. 1994, pp. 452-453.

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