Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2006-04-18
2006-04-18
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S659000, C257S660000, C257S712000, C257S713000, C257S177000, C257S676000, C257S721000, C257S790000, C257S921000, C361S715000, C361S704000, C361S719000, C361S818000, C361S816000, C174S034000
Reexamination Certificate
active
07030482
ABSTRACT:
A method and apparatus for increasing the immunity of new generation microprocessors from electrostatic discharge events involve shielding the microprocessors at the die level. A gasket of a lossy material is provided on the substrate upon which the microprocessor is mounted. The gasket surrounds the microprocessor to protect it from electrostatic discharge pulses. A heat spreader is arranged in heat conducting relation with the microprocessor and atop at least a portion of the gasket adjacent the die. The material is a static dissipative material having a volume resistivity of greater than 102ohm cm and a shielding effectiveness to protect the microprocessor from at least 4 kV of electrostatic discharge pulse at the computer system level in which the microprocessor is to be used.
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Kenyon & Kenyon LLP
Williams Alexander Oscar
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