Method and apparatus for programming nonvolatile memory

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185230

Reexamination Certificate

active

08072813

ABSTRACT:
A nonvolatile memory has logic which performs a programming operation, that controls a series of programming bias arrangements to program at least a selected memory cell of the memory array with data. The series of programming bias arrangements include multiple sets of changing gate voltage values to the memory cells.

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Kang-Deog Suh et al. “A 3.3 V 32 Mb NAND Flash Memory with Incremental Step Pulse Programming Scheme” IEEE Journal of Solid-State Circuits, vol. 30, No. 11, Nov. 1995, pp. 1149-1156.

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