Method and apparatus for programming nonvolatile memory

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185180

Reexamination Certificate

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07133317

ABSTRACT:
Programming nonvolatile memory cells is affected by the program disturb effect which causes data accuracy issues with nonvolatile memory. Rather than masking the voltage conditions that cause the program disturb effect, voltages are applied to neighboring nonvolatile memory cells, which takes advantage of the program disturb effect to program multiple cells quickly.

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