Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1996-12-20
1998-12-22
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 30, 117917, C30B 1522
Patent
active
058512837
ABSTRACT:
A single crystal production apparatus based on an HMCZ method for production a large-diametered single crystal having a uniform microscopic oxygen concentration distribution in its crystal growth direction to thereby provide a wafer having a high in-plane uniformity of oxygen concentration distribution. In the single crystal production apparatus based on the HMCZ method, when B denotes a vertical position of the bottom surface of a melt within a crucible and L denotes the depth of the melt at the time of starting crystal pulling operation, a vertical position of the coil central axis Cc of superconducting electromagnets 12 and 15 is controlled to be a proper value included in a range from a position below the position B by {(1/3).times.L} to a position above the position B by {(1/3).times.L} to pull the single crystal. Thereby the intensity of a magnetic field applied to the melt in the vicinity of the interface of the crystal growth within the crucible is weakened to increase the degree of freedom of the convection of the melt, while the intensity of the magnetic field applied to the melt in the vicinity of the bottom part of the crucible is strengthened to suppress the convection.
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patent: 5196085 (1993-03-01), Szekely, et al.
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Fusegawa Izumi
Hoshi Ryouji
Ohta Tomohiko
Sonokawa Masashi
Garrett Felisa
Shin-Etsu Handotai & Co., Ltd.
Snider Ronald R.
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