Method and apparatus for production of metal film or the like

Details Method and apparatus for production of metal film or the like Method and apparatus for production of metal film or the like

2007-04-24

2007-04-24

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S714000, C156S345520

Reexamination Certificate

active

10384932

ABSTRACT:
In a metal film production apparatus, a copper plate member is etched with a Cl2gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2gas, and the Cl* is supplied into the chamber to withdraw a Cl2gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

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