Method and apparatus for production of liquid phase epitaxial la

Details Method and apparatus for production of liquid phase epitaxial la Method and apparatus for production of liquid phase epitaxial la

1973-01-10

1976-01-20

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 148173, 252 623GA, H01L 738

Patent

active

039335380

ABSTRACT:
Single-crystal epitaxial layers of compound semiconductors or mixed semiconductors are grown on suitable substrates from the liquid phase, which consists of a molten metallic solvent dissolving a source material of the semiconductors, and within which the temperature gradient is produced so that in a high temperature region of the liquid solution a solid source material is dissolving into the liquid solution with at least a portion of the solid source material always at an undissolved state and in a low temperature region of the liquid solution an epitaxial layer is depositing onto the substrate, the temperatures in the liquid solution being kept constant during the epitaxial growth. Each substrate is positioned in one of a number of slots which are provided in the upper surface of a slider and it is successively transferred with the slider to contact with the liquid solution. The composition and/or the doping level of each epitaxial layer are controlled by the composition and/or the doping level of the solid source material which is selected from a pre-synthesized material, i.e., a solid film produced on the liquid solution by supersaturation and a film deposited on the liquid solution from the vapor phase.

REFERENCES:
patent: 3537029 (1970-10-01), Kressel et al.
patent: 3631836 (1972-01-01), Jarvela et al.
patent: 3713900 (1973-01-01), Suzuki
patent: 3785885 (1974-01-01), Stone

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