Method and apparatus for producing ultra-thin semiconductor...

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S457000, C438S458000, C257SE21599

Reexamination Certificate

active

11196967

ABSTRACT:
A method for producing an ultra-thin semiconductor chip and an ultra-thin back-illuminated solid-state image pickup device utilizing a semiconductor layer formed on a support substrate via an insulating layer to improve separation performance of a semiconductor layer from a support substrate and thereby improve the productivity and quality. The method uses two porous peeling layers on opposite sides of a substrate to produce an ultra-thin substrate.

REFERENCES:
patent: 5453394 (1995-09-01), Yonehara et al.
patent: 6194245 (2001-02-01), Tayanaka
patent: 6682990 (2004-01-01), Iwane et al.
patent: 2003/0203547 (2003-10-01), Sakaguchi et al.
patent: 2005/0074954 (2005-04-01), Yamanaka

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and apparatus for producing ultra-thin semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for producing ultra-thin semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for producing ultra-thin semiconductor... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3826693

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.