Method and apparatus for producing semiconductor layers composed

Details Method and apparatus for producing semiconductor layers composed Method and apparatus for producing semiconductor layers composed

1989-03-13

1990-08-14

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

427 39, 427 47, 136258, 118723, H01L 21205, H01L 3120

Patent

active

049487507

ABSTRACT:
A method and apparatus are provided for improving the dangling-bond saturation in amorphous silicon-germanium semiconductor layers. The deposition from the vapor phase of germane, silane, and hydrogen proceeds on the basis of different plasma excitations in the same reactor, that are spatially separated. Capacitive and inductively coupled plasmas are generated at different locations, in such a manner that the two plasmas superimpose in a central substrate region. For increasing the ionization density, the inductively excited plasma has a dc magnetic field for resonance excitation superimposed on it perpendicular to the radio frequency magnetic field. Amorphous silicon-germanium layers containing hydrogen are produced that have a low density of states and are particularly suitable for thin-film tandem solar cells.

REFERENCES:
patent: 4292343 (1981-09-01), Plaettner et al.
patent: 4481229 (1984-11-01), Suzuki et al.
patent: 4521447 (1985-06-01), Ovshinsky et al.
patent: 4583492 (1988-04-01), Cowher et al.
patent: 4686113 (1987-08-01), Delfino et al.
patent: 4760008 (1988-07-01), Yamazaki et al.
patent: 4808553 (1989-02-01), Yamazaki
patent: 4859908 (1989-08-01), Yoshida et al.
Easton et al, "The Plasma-Enhanced Deposition of Hydrogenated Amorphous Silicon", Vacuum, vol. 34, No. 3-4 (1984), pp. 371 to 376.
Matsuda et al, "Guiding Principle in the Preparation of High-Photosensitive Hydrogenated Amorphous Si-Ge Alloys from Glow-Discharge Plasma", Japanese Journal of Applied Physics, vol. 25, No. 1, Jan. (1986), pp. L54-L56.
Yamanka et al, "High-Performance Hydrogenated Amorphous Silicon-Germanium Solar Cells Fabricated by Photochemical Vapor Deposition", Japanese Journal of Applied Physics, vol. 26, No. 7, Jul. (1987), pp. 1107-1111.
Nishikawa et al, "Influence of RF Power on Properties of a-Si.sub.1-x Ge.sub.x :H Prepared by RF Glow Discharge Decomposition", Japanese Journal of Applied Physics, vol. 25, No. 4, Apr. (1986), pp. 519-523.
Mackenzie et al, "Structural, Electrical, and Optical Properties of a Si.sub.1-x Ge.sub.x :H and an Inferred Electronic Band Structure", Physical Review B, vol. 31, No. 4, Feb. (1985), pp. 2198-2212.
Szuszczewicz et al, "Spatial Distributions of Plasma Density in a High-Frequency Discharge with a Superimposed Static Magnetic Field", The Physics of Fluids, vol. 15, No. 12, Dec. (1972), pp. 2240-2246.

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