Method and apparatus for producing high purity silicon

Coating processes – Electrical product produced – Welding electrode

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427 52, 427255, 118725, 118726, 118733, 423349, B05D 314, C23C 1100, C01B 3302

Patent

active

044812329

ABSTRACT:
A method for producing high purity silicon includes forming a copper silie alloy and positioning the alloy within an enclosure. A filament member is also placed within the enclosure opposite the alloy. The enclosure is then filled with a chemical vapor transport gas adapted for transporting silicon. Finally, both the filament member and the alloy are heated to temperatures sufficient to cause the gas to react with silicon at the alloy surface and deposit the reacted silicon on the filament member. In addition, an apparatus for carrying out this method is also disclosed.

REFERENCES:
patent: 2499009 (1950-02-01), Wagner
patent: 3058812 (1962-10-01), Chu et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and apparatus for producing high purity silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for producing high purity silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for producing high purity silicon will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1042226

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.