Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2011-04-12
2011-04-12
Pham, Thanhha (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S292000, C257SE31105
Reexamination Certificate
active
07923758
ABSTRACT:
The present invention includes methods for producing GaAs/Si composites, GaAs/Si composites, apparatus for preparing GaAs/Si composites, and a variety of electronic and photoelectric circuits and devices incorporating GaAs/Si composites of the present invention.
REFERENCES:
patent: 6211560 (2001-04-01), Jimenez et al.
Erlacher Artur
Ullrich Bruno
Bowling Green State University
Gilcrest Roger A.
Pham Thanhha
LandOfFree
Method and apparatus for producing gallium arsenide and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for producing gallium arsenide and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for producing gallium arsenide and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2653571