Method and apparatus for producing a wafer

Details Method and apparatus for producing a wafer Method and apparatus for producing a wafer

1997-04-04

1999-10-26

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 17, 156345, 83117, 234 46, B28D 500, C30B 3312

Patent

active

059727950

ABSTRACT:
A method and an apparatus for producing a wafer from a crystalline ingot, wherein the method supplies an etching gas, having a high etching property for at least one constituent of the crystalline ingot, in a state of a molecular beam stream on a predetermined part of the crystalline ingot to be processed, volatilizing the predetermined part gradually from the ingot, and then removing the predetermined part entirely so as to cut the wafer from the ingot. According to the method, waste in cutting can be greatly minimized and the work environment can also be kept clean. Further, excellent surface smoothness can be realized on the cut wafers.

REFERENCES:
patent: 4960495 (1990-10-01), Mori et al.

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