Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1997-06-10
1998-05-05
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 20, 117222, C30B 1520
Patent
active
057468249
ABSTRACT:
An apparatus and a method are provided for producing a silicon single crystal in an inert-gas flushed pulling chamber by pulling the single crystal from a melt by the Czochralski method. The method includes a) providing in the pulling chamber a first inner chamber and a second inner chamber, each of which is delineated by side, top and bottom boundaries; b) passing a first inert gas stream through the top boundary of the first inner chamber into the first inner chamber, which contains a heat shield, which is disposed around the single crystal, and a crucible containing the melt, and c) passing a second inert gas stream through the bottom boundary of the second inner chamber into the second inner chamber, which contains a heating device for heating the crucible, with the proviso that the first inert gas stream and the second inert gas stream are only able to mix, at the earliest, after leaving the inner chambers.
REFERENCES:
patent: 5363796 (1994-11-01), Kobayashi et al.
patent: 5394829 (1995-03-01), Uesugi et al.
Garrett Felisa
Wacker Siltronic Gesellschaft fur Halbeitermaterialien AG
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