Method and apparatus for producing a semiconductor device

Details Method and apparatus for producing a semiconductor device Method and apparatus for producing a semiconductor device

1995-12-28

1999-10-26

Kelly, C. H.

Coating apparatus

Gas or vapor deposition

Multizone chamber

118725, 118729, 4272551, C23C 1600

Patent

active

059721162

ABSTRACT:
In a method for producing a semiconductor device using a dual tube reactor, inert gas is fed into the vertical reaction-tube, a reaction gas is introduced into the vertical reaction-tube, the inert gas is exhausted through the annular channel formed between the inner tube and the outer tube at a bottom portion of the vertical reaction-tube; and, a wafer is heat treated in the vertical reaction-tube by means of a heating furnace. In order to decrease the number and size of the particles, the wafer is displaced upward and then positioned at a level substantially the same as or above the top end of the inner tube, and the reaction gas is introduced into the vertical reaction-tube at or above the position of the wafer. Furthermore, the inert gas is caused to flow from a bottom portion of the inner tube toward the wafer positioned as above. As a result, inflow of the reaction gas into the inner tube is impeded, and the generation of particles there can be lessened.

REFERENCES:
patent: 4593168 (1986-06-01), Amada
patent: 5134092 (1992-07-01), Matsumoto et al.
patent: 5164012 (1992-11-01), Hattori
patent: 5387557 (1995-02-01), Takagi
patent: 5445676 (1995-08-01), Takagi
patent: 5484484 (1996-01-01), Yamaga et al.
patent: 5551984 (1996-09-01), Tanahashi
patent: 5750436 (1998-05-01), Yamaga et al.

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