Coating processes – Electrical product produced – Welding electrode
Patent
1988-04-18
1991-01-22
Nguyen, Nam X.
Coating processes
Electrical product produced
Welding electrode
427 38, 427 42, 427 431, 118 501, 118723, B05D 306, C23C 1648
Patent
active
049870076
ABSTRACT:
A method and apparatus is provided which produces a layer of material on a substrate by extracting ions from a laser ablation plume in a vacuum environment. In a basic embodiment, the apparatus includes a vacuum chamber containing a target material and a laser focused on the target to ablate the material and ionize a portion of the ablation plume. An accelerating grid within the vacuum chamber is charged to extract the ions from the plume and direct the ions onto a substrate to grow the layer. The basic embodiment has produced diamond-like carbon films on a clean, unseeded silicon substrate at deposition rates approaching 20 microns per hour. The diamond-like carbon films produced were of exceptional quality: uniform thickness with a surface roughness about 1 Angstrom; uniform index of refraction within the range of 1.5-2.5; resistivity greater than 40 megs ohms per centimeter; and a hard surface resistant to physical abuse. An enhanced embodiment includes multiple targets within the vacuum chamber and mechanisms to selectively produce ions from each target. Thus, layers of different materials or doped materials can be made on the substrate. Additionally, the enhanced embodiment includes a mechanism for making patterns or circuits within each layer. One version incorporates a mask within the ion fluence and ion optics to magnify the mask pattern onto the substrate. Another version uses ion optics to form an ion beam and deflection plates controlling the ion beam to write the desired pattern on the substrate.
REFERENCES:
patent: 3406349 (1968-10-01), Swain et al.
patent: 4281030 (1981-07-01), Silfvast
patent: 4370176 (1983-01-01), Bruel
patent: 4664769 (1987-05-01), Cuomo et al.
patent: 4664940 (1987-05-01), Bensoussan et al.
patent: 4701592 (1987-10-01), Cheung
Sato et al., Diamond-Like Carbon Films Prepared by Pulsed-Laser Evaporation, Appl. Phys. A 35, 355-360 (1985).
Nagel et al., Deposition of Amorphous Carbon Films from Laser-Produced Plasmas, Mat. Res. Soc. Symp. Proce., vol. 38 (1985), Materials Research Society.
Sato et al., Deposition of Diamond-Like Carbon Films by Pulsed-Laser Evaporation, Japanese Journal of Applied Physics, vol. 26, No. 9, Sep. 1987, pp. L1487-L1488.
Cheung et al., Growth of Thin Films by Laser-Induced Evaporation, Critical Review of Solid State and Materials Seiences, vol. 15, Issue 1 (1988).
Mirtich et al., "Diamondlike Carbon Protective Coatings for IR Materials", National Aeronautics and Space Administration.
Angus et al., "Low-Pressure, Metastable Growth of Diamond and Diamondlike Phases", Science, vol. 241 (Aug. 19, 1988).
Richter et al., "About the Structure and Bonding of Laser Generated Carbon Films by Raman and Electron Energy Loss Spectroscopy", Journal of Non-Crystalline Solids 88 (1986), 131-144.
Kitahama et al., "Synthesis of Diamond by Laser-Induced Chemical Vapor Deposition", Appl. Phys, Lett 49 (11), Sep. 15, 1986.
Messier et al., "From Diamond-Like Carbon to Diamond Coatings", Thin Solid Films, 153 (1987), 1-9.
Kitabatake et al., "Growth of Diamond at Room Temperature by an Ion-Beam Sputter Deposition under Hydrogen-Ion Bombardment", J. Appl. Phys. 58(4), Aug. 15, 1985.
Sato et al., "Deposition of Diamond-Like Carbon Films by Pulsed-Laser Evaporation", (1987).
Collins Carl B.
Wagal Suhas S.
Board of Regents , The University of Texas System
Nguyen Nam X.
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